Researchers

MUTA Hiroshi

MUTA Hiroshi: Professor

Faculty	Department of Electric and Electronic Engineering / Graduate School of Humanity-Oriented Science and Engineering
Researchmap	https://researchmap.jp/read0094732

Education and Career

Academic & Professional Experience

Apr. 2015 - Today , Kinki University, Human-oriented Engineering 電気電子工学科 Professor

Research Activities

Published Papers

Characteristics of very high-frequency plasma with an underexpanded supersonic gas jet
Hiroshi Muta; Hiroyuki Taguchi; Teppei Yamanishi; Go Hirano; Satoshi Nishida
Vacuum 217 , 112530-1-112530-7, Nov. 2023 , Refereed
非平衡プラズマジェットCVD法によるシリコン製膜時に装置内圧力が製膜速度，膜質におよぼす影響
西田哲; 納土亮; 牟田浩司; 栗林志頭眞
化学工業論文集 41 (2) , 148-152, 2015 , Refereed
Plasma CVD with High Deposition Rate using High Speed Jets
S. Nishida; H. Muta; S. Kuribayashi
NAGARE 34 (1) , 15-20, 2015

プラズマCVDにおける成膜条件の最適化に向けた反応機構の理解とプロセス制御・成膜事例 , 牟田浩司 , 第9章超音速噴流を用いた高速・大面積均一な微結晶シリコン製膜プロセス , 第9章超音速噴流を用いた高速・大面積均一な微結晶シリコン製膜プロセス , サイエンス＆テクノロジー , Sep. 2018

MISC

B132 Experimental research of the degree of Si crystallinity controlling method in the non-equilibrium plasma jet CVD , Nodo Ryo; Matsunaga Takuma; Iseki Masahito; Muta Hiroshi; Nishida Satoshi; Kuribayashi Shizuma , Procee[d]ings of Thermal Engineering Conference , 2013 , 57 , 58 , 18, Oct. 2013
Summary:Solar energy is capturing the spotlight as clean energy replaced with atomic energy. Then, we paid attention to the thin film silicon solar cell with low manufacture cost. It is usually manufactured by PECVD under low back pressure. We found that high-speed film deposition was enabled by increasing back pressure. However, high back pressure is put into the domain of a viscous flow, and produces involvement of clusters. The film quality will be worsened if a cluster adheres to a substrate. In order to attain a high quality and high deposition rate, it is necessary to investigate the dependence between the back pressure and deposition quality, and the relation between the back pressure and deposition rate. This paper reports the experimental results.
G212 Influence of gas flow rate on Si deposition rate by non-equilibrium plasma CVD , Matsuoka Kazuki; Okamoto Naoki; Ando Daisuke; Nakamura Jiro; Nishida Satoshi; Muta Hiroshi; Kuribayashi Shizuma , Procee[d]ings of Thermal Engineering Conference , 2012 , 435 , 436 , 16, Nov. 2012
Using a Supersonic Under-Expanded Jet α/μc-Si:H Deposition by Non-equilibrium VHF Plasma Enhanced CVD , ANDO Daisuke; NAKAMURA Jiro; TSUNEKAWA Yoshihiro; NISHIDA Satoshi; MUTA Hiroshi; KURIBAYASHI Shizuma; TAKEUCHI Yoshiaki; YAMAUCHI Yoshihiro; TAKATSUKA Hiromu , 電気学会研究会資料. PST, プラズマ研究会 , 2010 , 48 , 5 , 10 , 11, Aug. 2010